Metalorganic vapour-phase epitaxyMetalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.
Infrared detectorAn infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors). The thermal effects of the incident IR radiation can be followed through many temperature dependent phenomena. Bolometers and microbolometers are based on changes in resistance. Thermocouples and thermopiles use the thermoelectric effect. Golay cells follow thermal expansion. In IR spectrometers the pyroelectric detectors are the most widespread.
Indium antimonideIndium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems.
ThermographyInfrared thermography (IRT), thermal video and/or thermal imaging, is a process where a thermal camera captures and creates an image of an object by using infrared radiation emitted from the object in a process, which are examples of infrared imaging science. Thermographic cameras usually detect radiation in the long-infrared range of the electromagnetic spectrum (roughly 9,000–14,000 nanometers or 9–14 μm) and produce images of that radiation, called thermograms.
Indium arsenideIndium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm. The detectors are usually photovoltaic photodiodes.
Infrared homingInfrared homing is a passive weapon guidance system which uses the infrared (IR) light emission from a target to track and follow it seamlessly. Missiles which use infrared seeking are often referred to as "heat-seekers" since infrared is radiated strongly by hot bodies. Many objects such as people, vehicle engines and aircraft generate and emit heat and so are especially visible in the infrared wavelengths of light compared to objects in the background.
Night visionNight vision is the ability to see in low-light conditions, either naturally with scotopic vision or through a night-vision device. Night vision requires both sufficient spectral range and sufficient intensity range. Humans have poor night vision compared to many animals such as cats, foxes and rabbits, in part because the human eye lacks a tapetum lucidum, tissue behind the retina that reflects light back through the retina thus increasing the light available to the photoreceptors.
Light-emitting diodeA light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.
PhotodetectorPhotodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.
