Concept

Krypton fluoride laser

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Bi:SiO2 fiber drawn under oxidizing conditions shows ultra-low photosensitivity and no NIR luminescence under 1064 nm pumping. Hydrogen loading followed by ArF irradiation induced both. The increase of photosensitivity and the creation of luminescence cent ...

2013

A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing

Yi Zhang, Christophe Marcel Georges Galland

We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, wi ...

Institute of Electrical and Electronics Engineers2013

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Fluorine in polytetrafluoroethylene (PTFE) changes its states and transfers to titania by comilling and annealing of a titania-PTFE mixture. XPS, F-19 MAS NMR, FT-IR. Raman spectra, TEM and EDX analyses consistently indicated the oxidative decomposition of ...

Amer Chemical Soc2013

A High-Efficiency Nonuniform Grating Coupler Realized With 248-nm Optical Lithography

Christophe Marcel Georges Galland, Yang Liu

We describe a high-efficiency grating coupler (GC) fabricated on a silicon-on-insulator wafer with 220 nm top silicon layer. One single 60 nm shallow etch is required to define the diffractive gratings with a minimum lithographic feature size of 180 nm, wh ...

Institute of Electrical and Electronics Engineers2013

Raman Lidar for Meteorological Observations, RALMO - Part 1: Instrument description

Hubert van den Bergh, Bertrand Calpini, Valentin Simeonov, Marc Parlange, Pablo Roberto Ristori, Todor Dinoev

A new Raman lidar for unattended, round-the-clock measurement of vertical water vapor profiles for operational use by the MeteoSwiss has been developed during the past years by the Swiss Federal Institute of Technology, Lausanne. The lidar uses narrow fiel ...

European Geosciences Union2013

Post-CMOS Processing and 3-D Integration Based on Dry-Film Lithography

Carlotta Guiducci, Yusuf Leblebici, Yüksel Temiz

This paper presents a chip-level postcomplementary metal oxide semiconductor (CMOS) processing technique for 3-D integration and through-silicon-via (TSV) fabrication. The proposed technique is based on dry-film lithography, which is a low-cost and simple ...

Ieee-Inst Electrical Electronics Engineers Inc2013

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Fiber Bragg Gratings were fabricated using a 193-nm-ArF-excimer laser with ac index changes of 0.6×10E-4 and 2.2×10E-4 in pristine and H2-loaded Bi-Al-SiO2 fibers. Thermal annealing of the FBGs was investigated using continuous isochronal annealing. ...

2012

Fabrication of Bragg Gratings in Microstructured Bi:SiO2 Optical Fiber Using an ArF Laser

Hans Georg Limberger, Georgios Violakis

An ArF excimer laser was used to fabricate Bragg gratings in Bi:SiO2 core - microstructured cladding optical fiber. Average and modulated refractive index changes of 2.7 × 10E-4 and 1.0 × 10E-4 were induced in pristine fiber. Fiber luminescence was also me ...

2012

Thermal decay of UV Ar+ and ArF excimer laser fabricated Bragg gratings in SMF-28e and Bi-Al-doped optical fiber

Hans Georg Limberger, Georgios Violakis, Pouneh Saffari

2012

This paper gives a personal account of the research and development work at Bell Telephone Laboratories, Inc. during the first ten years following the first demonstration of semiconductor injection lasers. ...

Iop Publishing Ltd2012