Publications related to Silicon carbide

Pulsed-current versus constant-voltage light-emitting electrochemical cells with trifluoromethyl-substituted cationic iridium(III) complexes

Michael Graetzel, Mohammad Khaja Nazeeruddin, Rosario Scopelliti, Cristina Roldán Carmona

We report on five cationic iridium(III) complexes with cyclometalating 2-(3'-trifluoromethylphenyl)pyridine and a diimine, (C boolean AND N)(2)Ir(N boolean AND N), N boolean AND N = 4,4'-R-2-2,2'-dipyridyl or 4,7-R-2-1,10-phenanthroline (R = H, Me, ...

Royal Society of Chemistry2013

Cimetidine, C10H16N6S, form C: crystal structure and modelling of polytypes using the superspace approach

Gervais Chapuis, Alla Arakcheeva, Philip Pattison

An efficient method for modelling a polytypic family is presented with the example of cimetidine in the form C polymorph. The method exploits the (3 + 1)-dimensional superspace model, which is a powerful tool for the description, prediction and understandi ...

Wiley-Blackwell2013

Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

Christophe Ballif, Duncan Thomas Lindsay Alexander, Jonas Geissbühler, Stefaan De Wolf, Loris Barraud, Johannes Peter Seif, Bénédicte Demaurex

Excellent amorphous/crystalline silicon interface passivation is of extreme importance for high-efficiency silicon heterojunction solar cells. This can be obtained by inserting hydrogen-plasma treatments during deposition of the amorphous silicon passivati ...

American Institute of Physics2013

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics, aluminum nitride (AlN) and silicon nitride (Si3N4), are presented. The switches have been characterized and compared in terms of DC and RF performance (5-40 GHz). S ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Mechanical and tribological properties of polymer-derived Si/C/N sub-millimetre thick miniaturized components fabricated by direct casting

Jürgen Brugger, Vahid Fakhfouri, Rosario Maurizio Gullo, Thomas Kiefer, Jonas Grossenbacher

The utilization of silicon-based polymers as a source of amorphous non-oxide ceramics obtained upon pyrolytic treatment of them is increasingly gaining attention in research and is currently expanding into the field of commercial products. This work is foc ...

2012

Amorphous silicon based particle detectors

Christophe Ballif, Sylvain Dunand, Matthieu Despeisse, Yannick Samuel Riesen, François Eric Powolny, Andrea Franco

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates ...

Materials Research Society2012

On the Exploitation of the Inherent Error Resilience of Wireless Systems under Unreliable Silicon

Andreas Peter Burg, Georgios Karakonstantis

In this paper, we investigate the impact of circuit misbehavior due to parametric variations and voltage scaling on the performance of wireless communication systems. Our study reveals the inherent error resilience of such systems and argues that sufficien ...

Ieee2012

Low-strain interface models for epitaxial graphene on SiC(0001)

Alfredo Pasquarello, Gabriele Sclauzero

A set of low-strain commensurate interface structures for epitaxial graphene on SiC(0001) are obtained by combining rotated graphene supercells with m x m or m root 3 x m root 3R30 degrees SiC cells. For two among the interfaces with lowest strain, corresp ...

Elsevier2012

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Silicon carbide

Pulsed-current versus constant-voltage light-emitting electrochemical cells with trifluoromethyl-substituted cationic iridium(III) complexes

Cimetidine, C10H16N6S, form C: crystal structure and modelling of polytypes using the superspace approach

Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy

Mechanical and tribological properties of polymer-derived Si/C/N sub-millimetre thick miniaturized components fabricated by direct casting

Amorphous silicon based particle detectors

Molybdenum boride and carbide catalyze hydrogen evolution in both acidic and basic solutions

On the Exploitation of the Inherent Error Resilience of Wireless Systems under Unreliable Silicon

Low-strain interface models for epitaxial graphene on SiC(0001)

Graph Chatbot

Chat with Graph Search

Cimetidine, C10H16N6S, form C: crystal structure and modelling of polytypes using the superspace approach

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy

Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

Mechanical and tribological properties of polymer-derived Si/C/N sub-millimetre thick miniaturized components fabricated by direct casting

Low-strain interface models for epitaxial graphene on SiC(0001)

Amorphous silicon based particle detectors

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

On the Exploitation of the Inherent Error Resilience of Wireless Systems under Unreliable Silicon

Molybdenum boride and carbide catalyze hydrogen evolution in both acidic and basic solutions

Pulsed-current versus constant-voltage light-emitting electrochemical cells with trifluoromethyl-substituted cationic iridium(III) complexes