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High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...
Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...
Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...
Experimental data for the generation of optical frequency combs in magnesium fluoride microcavities with whispering gallery modes at 780 nm are presented. This wavelength corresponds to the normal group velocity dispersion for pumping by a laser diode oper ...
The fast Beam Condition Monitor (BCM1F) for the CMS experiment at the LHC was upgraded for precision luminosity measurement in the demanding conditions foreseen for LHC Run3. BCM1F has been rebuilt with new silicon diodes, produced on the CMS Phase 2 Outer ...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...
The increasing penetration of renewable energy sources, energy storage systems (ESSs), and DC loads has opened the door to DC technology to pave its way into future grids. The shift has been more obvious in the marine domain supported by track records of i ...
Hydrogenated Amorphous Silicon (a-Si:H) is a well known material for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of ...
The deexcitation of a synchronous machine has been used for the protection of the power supply based on a diode rectifier in marine dc power distribution networks. The fault current from the generator can be eliminated with the protection method utilizing ...