Concept

Diode Schottky

Publications associées (32)

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

Hydrogenated Amorphous Silicon (a-Si:H) is a well known material for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of ...

2022

Electron Emission Regimes of Planar Nano Vacuum Emitters

Yujia Yang, Alberto Nardi, Marco Turchetti

Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Upgraded CMS Fast Beam Condition Monitor for LHC Run 3 Online Luminosity and Beam Induced Background Measurements

The fast Beam Condition Monitor (BCM1F) for the CMS experiment at the LHC was upgraded for precision luminosity measurement in the demanding conditions foreseen for LHC Run3. BCM1F has been rebuilt with new silicon diodes, produced on the CMS Phase 2 Outer ...

2022

Generation of Optical Frequency Combs in an Optical Microresonator Pumped by a 780-nm Laser Diode in Self-Injection Locking Regime

Andrey Voloshin

Experimental data for the generation of optical frequency combs in magnesium fluoride microcavities with whispering gallery modes at 780 nm are presented. This wavelength corresponds to the normal group velocity dispersion for pumping by a laser diode oper ...

2022

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Alessandro Floriduz

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Deexcitation Characterization for Power Supply Protection in DC Shipboard Power Systems

Drazen Dujic, Seongil Kim

The deexcitation of a synchronous machine has been used for the protection of the power supply based on a diode rectifier in marine dc power distribution networks. The fault current from the generator can be eliminated with the protection method utilizing ...

2020

Protection Coordination in Marine DC Power Distribution Networks

Seongil Kim

The increasing penetration of renewable energy sources, energy storage systems (ESSs), and DC loads has opened the door to DC technology to pave its way into future grids. The shift has been more obvious in the marine domain supported by track records of i ...

EPFL2020

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