Concept

Photoresist

Related publications (175)

SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithography

Jürgen Brugger, Andreea Veronica Savu, Nicolas Blondiaux, Oscar Vazquez Mena, Harry Heinzelmann, Mona Julia Katharina Klein, Raphaël Pugin, Franck Montagne

In this work, nanosphere lithography was integrated with standard microfabrication for the wafer-scale fabrication of silicon nitride (SiN) membranes with arrays of submicrometer holes. A monolayer of polystyrene (PS) beads with a mean diameter of 428 or 5 ...

2011

Pattern transfer and post processing of complex nanostructures formed by e-beam exposure in PMMA

Nico de Rooij, Sebastian Gautsch

We present results on various post processing techniques to create complex 3-dimensional nanostructures with enhanced capabilities. The starting point for all architectures is a self aligned nanopillar with surrounding circular rim in PMMA. This particular ...

Elsevier2011

U-Shaped Nano-Apertures for Enhanced Optical Transmission and Resolution

Hatice Altug, Arif Engin Cetin, Serap Aksu

The subject of light transmission through optically thin metal films perforated with arrays of subwavelength nanoholes has recently attracted significant attention. In this work, we present experimental and calculated results on optical transmission/reflec ...

SPIE-INT SOC OPTICAL ENGINEERING2011

Carbon nanotubes nanocomposites for microfabrication applications

László Forró, Arnaud Magrez, Sébastien Jiguet, Moshe Judelewicz, Marijana Mionic Ebersold, Thierry Stora

A composite epoxy resin consisting in a SU-8 epoxy resin, a solvent, with or without photoinitiator and carbon nanotubes in powder. When the resin is combined with the carbon nanotubes, the mechanical, thermal and electrical properties of the nanocomposite ...

2011

Photopatterning the mechanical properties of polydimethylsiloxane films

Stéphanie Lacour

Silicone rubber films with graded and localized mechanical properties are prepared using two-part polydimethylsiloxane (PDMS) elastomer, photoinhibitor compounds and conventional photolithography. First the un-cross-linked PDMS is mixed with benzophenone. ...

American Institute of Physics2011

Suspended SU-8 structures for monolithic microfluidic channels

Martinus Gijs, Thomas Lehnert, Sébastien Jiguet, Yves Moser, Riccardo Forti

SU-8 photoresist is commonly used in the field of microfabrication as structural material or for molding of microfluidic devices. One major limitation, however, is the difficulty to process partially freestanding SU-8 structures or monolithic closed caviti ...

Springer-Verlag2011

High-throughput engineering of infrared plasmonic nanoantenna arrays with nanostencil lithography

Hatice Altug, Serap Aksu, Min Huang

We demonstrate a novel fabrication approach for high-throughput fabrication of engineered infrared plasmonic nanorod antenna arrays with nanostencil lithography (NSL). NSL technique, relying on deposition of materials through a shadow mask, offers the flex ...

SPIE-INT SOC OPTICAL ENGINEERING2011

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

Mihai Adrian Ionescu, Ji Cao, Anupama Arun

An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-de ...

2011

MAGNETIC NANOCRYSTAL MODIFIED EPOXY PHOTORESIST FOR MICROFABRICATION OF AFM PROBES

Jürgen Brugger, Cristina Martin Olmos

Nanocomposites based on an organic polymer and inorganic nanocrystals (NCs) represent a class of high impact functional materials able to convey the unique size and shape dependent properties of nano-objects to highly processable resists.[1] In this work, ...

2010

Electron-beam induced photoresist shrinkage influence on 2D profiles

Vasiliki Tileli

For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet Moore's Law. For the 32 nm node and beyond, new lithography techniques will be used, including immersion ArF (iArF) lithography and e ...

International Society for Optics and Photonics2010

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