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We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relatio ...
After assessing the current status concerning the interpretation of Si 2p core-level shifts in Si-O systems, we model the atomic structure of the Si(001)-SiO2 interface using recent photoemission data obtained with synchrotron radiation. Our model structur ...
In this thesis we study the interplay between electronic correlations and geometry in single-walled carbon nanotubes by microscopic model calculations. Electronic correlations are expected to be strong because of the low dimensionality of carbon nanotubes. ...
We report on a novel approach to measure the phase relaxation length and femtosecond lifetime of hot quasiparticles on metal surfaces. A 4 K scanning tunneling microscope has been used to study the spatial decay of interference patterns in the local densit ...
InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...
We use mass-resolved 2+2 resonantly enhanced multiphoton ionization (REMPD of silicon atoms to detect isotopically selective infrared multiphoton dissociation (IRMPD) of both ground-state and vibrationally pre-excited SiH4. To demonstrate that the detectio ...
Using a first-principles approach, we assess the validity of a picture for the energetics at Si-SiO2 interfaces based on bond energies complemented with penalty energies for silicon atoms in intermediate oxidation states. By total-energy calculations on cl ...
