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Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
PZT thin films for memory applications are known to lack sufficient resistance versus polarization fatigue when used together with platinum. One possible solution for this problem is to use conductive oxides like La1-xSrxCoO3 (LSCO) as an electrode. In thi ...
Electron energy loss spectroscopy in a high-resolution transmission electron microscope has recently been used with success to characterize the electronic properties of closed cage nanometer-size graphitic particles. In the plasmon region, the experimental ...
Boron doped diamond films were deposited on Ti substrates by CVD. Raman spectroscopy reveals small amts. of nondiamond carbon. According to SEM and XRD, the diamond films are polycryst. with preferential {112} crystallite orientation. Electrochem. measurem ...
(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600 degrees C, yielding a ...
Diamond tips are attractive tools for nanoscience because of their hardness and, when doped chemical vapor deposited (CVD) diamond is used, their electrical conductivity. In this article, devices based on CVD diamond coated silicon tips and molded diamond ...
The nature and the role of 1 to 5 nm thick TiO2 seed layers for the growth of textured PbTiO3 and Pb(Zr, Ti)O-3 thin films on textured Pt(111) thin film substrates have been studied. Under otherwise identical in situ sputter deposition process conditions, ...
Sol-gel processing parameters of Pb0.99Zr0.55Sn0.37Ti0.06Nb0.02O3 thin films were studied. Effects of H2O, HNO3 and formamide additives on solution gelation and film properties were investigated. Thin films were prepared on Ti/Pt and Ta/Pt metallized Si su ...
The stabilities of Pt/Ti bilayer metallizations in an oxidizing atmosphere have been investigated with several thicknesses of interfacial Ti-bonding layers. Reactions in the Pt/Ti/SiO2/Si interface were examined as a function of various annealing condition ...
