Atomic layer depositionAtomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors.
EllipsometryEllipsometry is an optical technique for investigating the dielectric properties (complex refractive index or dielectric function) of thin films. Ellipsometry measures the change of polarization upon reflection or transmission and compares it to a model. It can be used to characterize composition, roughness, thickness (depth), crystalline nature, doping concentration, electrical conductivity and other material properties. It is very sensitive to the change in the optical response of incident radiation that interacts with the material being investigated.
Semiconductor consolidationSemiconductor consolidation is the trend of semiconductor companies collaborating in order to come to a practical synergy with the goal of being able to operate in a business model that can sustain profitability. Since the rapid adoption of the modern day chip in the 1960s, most companies involved in producing semiconductors were extremely vertically integrated. Semiconductor companies owned and operated their own fabrication plants and also the processing technologies that facilitated the creation of the chips.
CleanroomA cleanroom or clean room is an engineered space, which maintains a very low concentration of airborne particulates. It is well isolated, well-controlled from contamination, and actively cleansed. Such rooms are commonly needed for scientific research, and in industrial production for all nanoscale processes, such as semiconductor manufacturing. A cleanroom is designed to keep everything from dust, to airborne organisms, or vaporised particles, away from it, and so from whatever material is being handled inside it.
Piranha solutionPiranha solution, also known as piranha etch, is a mixture of sulfuric acid () and hydrogen peroxide (). The result of the mixture gives rise to a strong union of two acids called per-hexa-sulfuric acid (H4SO6) that is used to clean organic residues off substrates. Because the mixture is a strong oxidizing agent, it will decompose most organic matter, and it will also hydroxylate most surfaces (by adding –OH groups), making them highly hydrophilic (water-compatible).
BroadcomBroadcom Inc. is an American multinational designer, developer, manufacturer, and global supplier of a wide range of semiconductor and infrastructure software products. Broadcom's product offerings serve the data center, networking, software, broadband, wireless, storage, and industrial markets. As of 2022, some 78 percent of Broadcom's revenue was coming from its semiconductor-based products and 22 percent from its infrastructure software products and services. Tan Hock Eng is the company's president and CEO.
Reactive-ion etchingReactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.
Integrated circuit layoutIn integrated circuit design, integrated circuit (IC) layout, also known IC mask layout or mask design, is the representation of an integrated circuit in terms of planar geometric shapes which correspond to the patterns of metal, oxide, or semiconductor layers that make up the components of the integrated circuit. Originally the overall process was called tapeout, as historically early ICs used graphical black crepe tape on mylar media for photo imaging (erroneously believed to reference magnetic data—the photo process greatly predated magnetic media).
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
Electron-beam lithographyElectron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
