BiasingIn electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an active device in an amplifier. Many electronic devices, such as diodes, transistors and vacuum tubes, whose function is processing time-varying (AC) signals, also require a steady (DC) current or voltage at their terminals to operate correctly. This current or voltage is called bias. The AC signal applied to them is superposed on this DC bias current or voltage.
Frequency mixerIn electronics, a mixer, or frequency mixer, is an electrical circuit that creates new frequencies from two signals applied to it. In its most common application, two signals are applied to a mixer, and it produces new signals at the sum and difference of the original frequencies. Other frequency components may also be produced in a practical frequency mixer. Mixers are widely used to shift signals from one frequency range to another, a process known as heterodyning, for convenience in transmission or further signal processing.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Insulated-gate bipolar transistorAn insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range.
Through-hole technologyIn electronics, through-hole technology (also spelled "thru-hole") is a manufacturing scheme in which leads on the components are inserted through holes drilled in printed circuit boards (PCB) and soldered to pads on the opposite side, either by manual assembly (hand placement) or by the use of automated insertion mount machines. Through-hole technology almost completely replaced earlier electronics assembly techniques such as point-to-point construction.
Traveling-wave tubeA traveling-wave tube (TWT, pronounced "twit") or traveling-wave tube amplifier (TWTA, pronounced "tweeta") is a specialized vacuum tube that is used in electronics to amplify radio frequency (RF) signals in the microwave range. It was invented by Andrei Haeff around 1933 as a graduate student at Caltech, and its present form was invented by Rudolf Kompfner in 1942-43. The TWT belongs to a category of "linear beam" tubes, such as the klystron, in which the radio wave is amplified by absorbing power from a beam of electrons as it passes down the tube.
Circuit diagramA circuit diagram (or: wiring diagram, electrical diagram, elementary diagram, electronic schematic) is a graphical representation of an electrical circuit. A pictorial circuit diagram uses simple images of components, while a schematic diagram shows the components and interconnections of the circuit using standardized symbolic representations. The presentation of the interconnections between circuit components in the schematic diagram does not necessarily correspond to the physical arrangements in the finished device.
Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Dangling bondIn chemistry, a dangling bond is an unsatisfied valence on an immobilized atom. An atom with a dangling bond is also referred to as an immobilized free radical or an immobilized radical, a reference to its structural and chemical similarity to a free radical. When speaking of a dangling bond, one is generally referring to the state described above, containing one electron and thus leading to a neutrally charged atom. There are also dangling bond defects containing two or no electrons.
