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A monolithically integrated displacement sensor has been fabricated in the GaAs/AlGaAs material system. The device is configured as a Michelson interferometer and consists of a DBR laser, a directional coupler, transparent waveguides and a photodetector. I ...
The dependence of the dispersion parameter α and of the time dependent diffusion parameter DH(tL) (estimated over a fixed diffusion length L) on annealing temperature Ta was investigated with elastic-recoil detection analysis (ERDA) in an undoped a-Si:H sa ...
Viologens adsorbed on TiO2 surfaces in nanocryst.-nanoporous electrodes were studied with regards to the electrochromic effect. The transparent nature and the high internal surface area of these electrodes are very beneficial in this regard. Absorbance up ...
A method to determine the individual strain-optic coefficients in single-mode fibers is described. It is based on two photoelastic experiments, namely, the polarimetric measurement of optical activity induced by mechanical twist and the interferometric mea ...
We have determined the origin of the spatial luminescence fluctuations observed between the dark line defects present in tensile strained GaxIn1-xP/In1-xP/n(+)-InP heterostructures (Part I [F. Cleton et al. J. Appl. Phys. 80, 827 (1996)]). For that purpose ...
Valence- and conduction-band offsets can be induced at GaAs(100) polar homojunctions by means of ultrathin Si intralayers. The microscopic interface dipole responsible for the creation of such offsets can be varied by changing the Si intralayer thickness; ...
Viologen derivs. adsorbed on TiO2 surfaces in nanocryst.-nanoporous electrodes have been studied with respect to electrochromic phenomena. The transparent nature and the high internal surface area of these electrodes are very beneficial for this purpose. T ...
