Concept

Helium–neon laser

Related publications (209)

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Pascal Gallo

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Iop Publishing Ltd2014

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Atom probe tomography allows for three-dimensional reconstruction of the elemental distribution in materials at the nanoscale. However, the measurement of the chemical composition of compound semiconductors may exhibit strong biases depending on the experi ...

Amer Chemical Soc2014

Data transmission in long-range dielectric-loaded surface plasmon polariton waveguides

Svyatoslav Kharitonov, Ashwani Kumar

We demonstrate the data transmission of 10 Gbit/s on-off keying modulated 1550 nm signal through a long-range dielectric-loaded surface plasmon polariton waveguide structure with negligible signal degradation. In the experiment the bit error rate penalties ...

Optical Soc Amer2014

InGaN alloys and heterostructures

Marlene Glauser

The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

EPFL2014

Quantum efficiency of technical metal photocathodes under laser irradiation of various wavelengths

Christoph Peter Hauri, Fernando Ardana Lamas

Quantum efficiency studies for various laser wavelengths and various technical metal surfaces were carried out in a dedicated unbaked vacuum chamber in the absence of a significant electrical field. Copper, magnesium, aluminum, and aluminum-lithium photoca ...

Springer Verlag2013

Phase noise measurement of external cavity diode lasers and implications for optomechanical sideband cooling of GHz mechanical modes

Tobias Kippenberg, Albert Schliesser

Cavity-optomechanical cooling via radiation pressure dynamical backaction enables ground-state cooling of mechanical oscillators, provided the laser exhibits sufficiently low phase noise. In this paper, we investigate and measure the excess phase noise of ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2013

On Micro Optical Elements for Efficient Light Diffusion

Roland Andreas Bitterli

Efficient light management is one of the key issues in modern energy conversion systems, be it to collect optical power or to redistribute light generated by high power light emitters. This thesis touches mainly on the subject of efficient light redistribu ...

EPFL2013

Spatial-Mode Discrimination in Guided and Antiguided Arrays of Long-Wavelength VCSELs

Elyahou Kapon, Nicolas Volet, Vladimir Iakovlev

Three means of optical confinement imposed on InAlGaAs/InP 1.3 mu m VCSEL arrays are investigated with self-consistent numerical model of laser operation. Laterally patterned tunnel junction (TJ), in-build guiding realized with air-gap patterning, and anti ...

Institute of Electrical and Electronics Engineers2013

Analysis and Control of Optical Modes in VCSELs and VCSEL-Arrays

Elodie Lamothe

In this thesis, we studied the modal structure and the polarization of the optical field emitted by vertical-cavity surface-emitting lasers (VCSELs) emitting in the short- and long-wavelength domains (0.9-1.3μm). Our study concerns two types of components: ...

EPFL2013

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

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