Concept

JFET

Related publications (229)

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Ideal saturated MHD helical structures in axisymmetric hybrid plasmas

Jonathan Graves, Wilfred Anthony Cooper, Daniele Brunetti

Kinked saturated m = 1 helical structures are frequently observed in tokamak hybrid plasmas and in reversed field pinches (RFP). These modes occur when an extremum in the safety factor is close to, but necessarily resonant with, a low order rational (typic ...

International Atomic Energy Agency2014

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

A Circuit Synthesis Flow for Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

Double-Gate (DG) controllable-polarity Field-Effect Transistors (FETs) are devices whose n- or p- polarity is on-line configurable by adjusting the second gate voltage. Such emerging transistors have been fabricated in silicon nanowires, carbon nanotuges a ...

Institute of Electrical and Electronics Engineers2014

Novel Grid-Based Power Routing Scheme for Regular Controllable-Polarity FET Arrangements

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Odysseas Zografos

Polarity-controllable transistors have emerged in the last few years as an adequate successor of current CMOS FinFETs. Due to the additional polarity terminal, novel physical design techniques are required. We present a novel grid-based power routing schem ...

IEEE2014

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Jian Zhang

Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

Impact of enhanced contact doping on minority carriers diffusion currents

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Minority carriers diffusion currents are particularly important in parasitic substrate couplings of Smart Power ICs. In CMOS technologies the P-substrate potential is imposed by P+ contacts and N-wells by N+ highly doped implantations. The doping concentra ...

IEEE2014

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Sara Rigante, Jan Brunner, Christian David

We analyzed 1/f noise in silicon nanowire ion-sensitive field-effect transistors (SiNW-ISFETs) having different wire widths ranging from 100 nm to 1 pin and operated under different gating conditions in order to determine the noise source and the sensor ac ...

Elsevier2014

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Gwénolé Jean Jacopin

We report on the mixed photovoltaic/photoconductive operation mode of a visible blind photodetector based on GaN nanowires containing a p-i-n junction. The photodetector operates as a photovoltaic device close to zero bias and exhibits a photoconductive ga ...

Amer Inst Physics2014

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