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The aim of this research project is to study the deposition of thermal atoms and small ionised clusters on well defined surfaces. For this, an installation has been developed at the Institut de Physique Expérimentale to produce mass selected ionic metal cl ...
A saturation of the yield strength appears in the post irradiation hardening of copper irradiated with high energy heavy ions, in the range from 10(-3)-10(-2) dpa. The saturation value of the yield strength is significantly lower than that measured after i ...
Low dose (10(-4) - 10(-2) dpa) irradiation of high-purity (99.99%) copper single crystals were performed in the PIREX facility with 600 MeV protons at room temperature. The irradiation hardening effects are investigated by measuring the yield stress or cri ...
The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass spectroscopy, and transmission electron microscopy across a corne ...
Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM ...
Laser generated defects in (Al,Ga) As have been investigated by photochemical wet etching and TEM measurements. Photoetching reveals a 500 nm wide zone in the center of the processed area where according to laser power either a luminescent or a nonradiativ ...
Springer-Verlag (Springer Series in Chemical Physics 39)1984
