Publication

Luminescence and TEM-investigation of laser induced defects in (Al,Ga)As heterostructures

René Salathé, Jean-Luc Martin, Franz-Karl Reinhart
1985
Conference paper

Abstract

Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations

Official source

https://infoscience.epfl.ch/record/131364?ln=en

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Luminescence and TEM-investigation of laser induced defects in (Al,Ga)As heterostructures

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From defect to effect: controlling electronic transport in chevron graphene nanoribbons

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

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