Concept

PIN diode

Related publications (81)

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material ...

2020

Modeling for Ultra Low Noise CMOS Image Sensors

Raffaele Capoccia

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

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Intrinsic and extrinsic pinning and passivation of m-plane cleavage facets of GaN n- p- n junctions were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. On freshly cleaved and clean p-type GaN( 10 1 0) ...

AMER INST PHYSICS2020

AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned Photodiode

Christian Enz, Assim Boukhayma, Antonino Caizzone

Photoplethysmography (PPG) enables non-invasive vitals monitoring. Nevertheless, it is intrinsically limited by the extremely small AC/DC ratio, also called perfusion-index (PI). This increases the dynamic-range requirements to reliably process the PPG wav ...

2019

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In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

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The invention relates to a photoplethysmography (PPG) sensing device comprising - a pulsed light source, - at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel com ...

2019

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

AMER CHEMICAL SOC2019

This work explains the synthesis of an efficient organic hole transporting material based on 4,4'-(5,5'-(thiazolo [5,4-d] thiazole-2,5-diyl) bis(furan-5,2-diyl)) bis(N, N-diphenylaniline) (TP-FTzF-TP) and the replacement of poly (3,4-ethylenedio-xythiophen ...

ELSEVIER SCIENCE BV2018

Photodiode Response in a CH3NH3PbI3/CH3NH3SnI3 Heterojunction

László Forró, Endre Horvath, Bálint Náfrádi, Andrea Pisoni, Massimo Spina, Karoly Holczer

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH3NH3PbI3 and its close relative, CH3NH3SnI3. In the dark state the device behaves as a dio ...

Amer Chemical Soc2017

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