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Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Nonlinear optical diode effect in a magnetic Weyl semimetal

Philip Johannes Walter Moll, Chunyu Guo, Hao Yang

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically co ...

Nature Portfolio2024

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

High sensitivity single-photon avalanche diode array

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored a ...

2021

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

Edoardo Charbon

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material ...

2020

Modeling for Ultra Low Noise CMOS Image Sensors

Raffaele Capoccia

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

An Ultra Low-Noise Micropower PPG Sensor

Antonino Caizzone

Nowadays, efficient and remote health monitoring is becoming increasingly important, given both the ageing of population and the combined action of an increase in obesity level and cardiovascular diseases. The healthcare industry is becoming more reliant o ...

EPFL2020

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AMER INST PHYSICS2020

An Ultra Low-Noise Micropower PPG Sensor

Antonino Caizzone

EPFL2020