PIN diode

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Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells

Roland Hany, Lei Wang, Beat Ruhstaller, Matia Bulloni

Cyanine dyes are fluorescent organic salts with intrinsic conductivity for ionic and electronic charges. Recently (J. Am. Chem. Soc. 2013, 135, 18008-18011), these features have been exploited in cyanine light-emitting electrochemical cells (LECs). Here, w ...

Amer Chemical Soc2016

One Transistor Active Pixel Sensor with Tunnel FET

Mihai Adrian Ionescu, Nilay Dagtekin

A tunneling field effect transistor for light detection, including a p-type region connected to a source terminal, a n-type region connected to a drain terminal, an intrinsic region located between the p-type region and the n-type region to form a P-I junc ...

2016

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Edoardo Charbon, Preethi Padmanabhan

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for ac ...

2016

A Bottom-Up Approach toward All-Solution-Processed High-Efficiency Cu(In,Ga)S

Kevin Sivula, Florian Le Formal, Nestor Guijarro Carratala, Xavier Adrian Jeanbourquin, Xiaoyun Yu, Pauline Bornoz, Mathieu Steven Prévot, Wiktor Stefan Bourée

The development of solution-processable routes to prepare efficient photoelectrodes for water splitting is highly desirable to reduce manufacturing costs. Recently, sulfide chalcopyrites (Cu(In,Ga)S-2) have attracted attention as photocathodes for hydrogen ...

Wiley-VCH Verlag Berlin2016

A dynamic operation of a PIN photodiode

Alexander Tagantsev, Maher Kayal, Serguei Okhonin, Adil Koukab, Maxim Gureev, Alexander Kvasov, Marc Pastre, Denis Sallin

Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we introduce a different concept of photodiode function: the photodiode is used in a dynamic regime wh ...

American Institute of Physics2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015

A charge carrier transport model for donor-acceptor blend layers

Wolfgang Richard Tress

Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device p ...

American Institute of Physics2015

Absorptive Limiter for Frequency-Selective Circuits

This letter describes a novel absorptive limiter for frequency-selective circuits. The proposed circuit allows the design of absorptive limiters based on a bi-state phase shifter, which is appropriate for integration into channelizing devices, such as hybr ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Partially gated lateral tunnel field effect transistor for optical applications

Mihai Adrian Ionescu, Nilay Dagtekin

Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...

Amer Inst Physics2014

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