Concept

Nanoelectromechanical relay

Related publications (66)

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

2017

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017

Electrostatically actuated MEMs relay for high power applications

Yves Perriard, Florian Louis Copt

In this paper, a MEMs relay for high power application is investigated. This relay has to hold a current of the order of magnitude of the Ampere and is subject to harsh environment such as high temperature or vibrations which can lead to a premature dysfun ...

2016

Designing Low Power and Durable Digital Blocks Using Shadow Nanoelectromechanical Relays

Paolo Ienne, Hossein Asadi, Sadegh Yazdanshenas

Nanoelectromechanical (NEM) relays are a promising emerging technology that has gained widespread research attention due to its zero leakage current, sharp ON-OFF transitions, and complementary metal-oxide-semiconductor compatibility. As a result, NEM rela ...

Institute of Electrical and Electronics Engineers2016

50 nm thick AlN Films for Actuation and Detection of Nanoscale Resonators

Paul Muralt, Luis Guillermo Villanueva Torrijo, Annalisa De Pastina, Ramin Matloub Aghdam, Kaitlin Marie Howell, Waqas Bashir

We report on the optimization of a multilayer platinum/aluminum nitride (AlN) stack with an AlN active layer thickness of 50 nm for piezoelectric actuation in nanoelectromechanical systems (NEMS). Experiments in reactive sputtering of AlN were used to find ...

2016

Harnessing the damping properties of materials for high-speed atomic force microscopy

Jürgen Brugger, Georg Fantner, Adrian Pascal Nievergelt, Blake William Erickson, Jonathan David Adams, Jonas Grossenbacher

The success of high-speed atomic force microscopy in imaging molecular motors1, enzymes2 and microbes3 in liquid environments suggests that the technique could be of significant value in a variety of areas of nanotechnology. However, the majority of atomic ...

Nature Publishing Group2016

NEM Relay Design with Biconditional Binary Decision Diagrams

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Winston Jason Haaswijk

In this paper, we present an improved design flow for nanoelectromechanical (NEM) relay-based combinational logic circuits. Six-terminal NEM relays can be programmed to act as 2-to-1 multiplexers. We can therefore use NEM relays to implement arbitrary comb ...

IEEE2015

Graphene for Nanoelectronic Applications

Pankaj Sharma

During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...

EPFL2015

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Antonios Bazigos, Daniel Grogg

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014

A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

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