Concept

Flash memory

Related publications (379)

BuMP: Bulk Memory Access Prediction and Streaming

Babak Falsafi, Boris Robert Grot, Stavros Volos, Javier Picorel Obando

With the end of Dennard scaling, server power has emerged as the limiting factor in the quest for more capable datacenters. Without the benefit of supply voltage scaling, it is essential to lower the energy per operation to improve server efficiency. As th ...

2014

Temperature-Aware Runtime Power Management for Chip-Multiprocessors with 3-D Stacked Cache

Giovanni De Micheli, Siang-Yun Lee

The advent of 3-D fabrication technology makes it possible to stack a large amount of last-level cache memory onto a multi-core die to reduce off-chip memory accesses and, thus, increases system performance. However, the higher power density (i.e., power d ...

2014

Rebasing I/O for Scientific Computing: Leveraging Storage Class Memory in an IBM BlueGene/Q Supercomputer

Felix Schürmann, Pramod Shivaji Kumbhar, Miguel Angel Gila Arrondo, Davide Tacchella, Alessandro Curioni, Fabien Jonathan Delalondre, John Anthony Biddiscombe, Peter Morjan, Blake Fitch, Bernard Metzler, Lars Schneidenbach, Robert Germain

Storage class memory is receiving increasing attention for use in HPC systems for the acceleration of intensive IO operations. We report a particular instance using SLC FLASH memory integrated with an IBM BlueGene/Q supercomputer at scale (Blue Gene Active ...

Springer2014

Single event upset mitigation in low power SRAM design

Adam Shmuel Teman

Logic compatible gain cell (GC)-embedded DRAM (eDRAM) arrays are considered an alternative to SRAM due to their small size, nonratioed operation, low static leakage, and two-port functionality. However, traditional GC-eDRAM implementations require boosted ...

IEEE2014

High Sum-Rate Three-Write and Nonbinary WOM Codes

Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on q levels. Each cell is initially in level 0 and can only increase its level. A t-write WOM code is a coding scheme, which allows one to store t messages to th ...

Institute of Electrical and Electronics Engineers2014

Ultra-Low Power Multicore Architecture For Parallel Biomedical Signal Processing

David Atienza Alonso, Andreas Peter Burg, Jeremy Hugues-Felix Constantin, Ahmed Yasir Dogan

A multi-core architecture with ultra-low power consumption is needed for a wide variety of applications, especially in the bio-medical domain. In this patent, an ultra-low power multi-core architecture is presented: it is composed of one or more cores, sev ...

2014

Unison Cache: A Scalable and Effective Die-Stacked DRAM Cache

Babak Falsafi, Ilknur Cansu Kaynak

Recent research advocates large die-stacked DRAM caches in manycore servers to break the memory latency and bandwidth wall. To realize their full potential, die-stacked DRAM caches necessitate low lookup latencies, high hit rates and the efficient use of o ...

IEEE2014

Cmos compatible non-volatile latch and d-flip flop using resistive switching materials

Davide Sacchetto, Yusuf Leblebici, Tugba Demirci

A non-volatile latch circuitry, comprising a Re RAM cell configured to store a final value of the non-volatile latch circuitry; a data selection circuitry configured to connect or disconnect a data input to a plus voltage node and a minus voltage node of t ...

2014

Design of Digital SoC for Operation at High Temperatures

Radisav Cojbasic

There is a growing demand for Systems-on-Chip, integrating microprocessors, on-chip memories, data converters and a variety of sensors, which are capable of reliable operation at high temperatures. For instance, modern aircraft industry demands microcontro ...

EPFL2014

Ferroelectric translational antiphase boundaries in nonpolar materials

Nava Setter, Alexander Tagantsev, Alexander Kvasov, Xiankui Wei

Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from t ...

2014

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