Farzan JazaeriFarzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.
Christian EnzChristian C. Enz (M84, S'12) received the M.S. and Ph.D. degrees in Electrical Engineering from the EPFL in 1984 and 1989 respectively. From 1984 to 1989 he was research assistant at the EPFL, working in the field of micro-power analog IC design. In 1989 he was one of the founders of Smart Silicon Systems S.A. (S3), where he developed several low-noise and low-power ICs, mainly for high energy physics applications. From 1992 to 1997, he was an Assistant Professor at EPFL, working in the field of low-power analog CMOS and BiCMOS IC design and device modeling. From 1997 to 1999, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for the design of RF CMOS circuits. In 1999, he joined the Swiss Center for Electronics and Microtechnology (CSEM) where he launched and lead the RF and Analog IC Design group. In 2000, he was promoted Vice President, heading the Microelectronics Department, which became the Integrated and Wireless Systems Division in 2009. He joined the EPFL as full professor in 2013, where he is currently the director of the Institute of Microengineering (IMT) and head of the Integrated Circuits Laboratory (ICLAB).He is lecturing and supervising undergraduate and graduate students in the field of Analog and RF IC Design at EPFL. His technical interests and expertise are in the field of very low-power analog and RF IC design, semiconductor device modeling, and inexact and error tolerant circuits and systems.He has published more than 200 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. Together with E. Vittoz and F. Krummenacher he is one of the developer of the EKV MOS transistor model and the author of the book "Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design" (Wiley, 2006). He has been member of several technical program committees, including the International Solid-State Circuits Conference (ISSCC) and European Solid-State Circuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 International Symposium on Low Power Electronics and Design (ISLPED), exhibit chair for the 2000 International Symposium on Circuits and Systems (ISCAS) and chair of the technical program committee for the 2006 European Solid-State Circuits Conference (ESSCIRC). Since 2012 he has been elected as member of the IEEE Solid-State Circuits Society (SSCS) Administrative Commmittee (AdCom). He is also Chair of the IEEE SSCS Chapter of Switzerland.
Andrea RuffinoAndrea Ruffino received the B.Sc. degree (cum laude) in Engineering Physics from Politecnico di Torino, Turin, Italy, in 2013, the triple joint M.Sc. degree (cum laude) in Micro and Nanotechnologies for Integrated Systems from Politecnico di Torino, Institut National Polytechnique de Grenoble (INPG), Grenoble, France, and École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland, in 2015 and the Ph.D. degree in Microsystems and Microelectronics from EPFL in 2021.
From 2015 to 2016, he was with Hypres, Inc., Elmsford, NY, USA, working on the design of superconducting readout circuits in rapid single flux quantum (RSFQ) technology for superconducting nanowire single-photon detectors. In 2016, he joined EPFL as a Research Assistant and from 2017 to 2018 he was a Visiting Research Assistant at Delft University of Technology, Delft, The Netherlands. Since 2016 he has been with EPFL, where he is working on cryogenic CMOS electronics for qubit readout and control, focusing on single-chip cryo-CMOS transceivers for scalable silicon quantum computers. His main research interests include analog and RF integrated circuit design, cryogenic CMOS electronics for quantum computing applications, superconducting electronics and sensors.
Dr. Ruffino was also among the Best Student Paper Award finalists at the IEEE Radio-Frequency Integrated Circuits (RFIC) Symposium 2019 and he is a recipient of the IEEE Solid-State Circuits Society (SSCS) Predoctoral Achievement Award for 2020-2021.
Yatao PengYatao Peng received the Ph.D. degree in electronics engineering at 2015 from the University of Chinese Academy of Sciences, Beijing, China, with a focus on the multi-band/wideband RF front-ended circuits in wireless communication station. From 2016 to 2017, he was a Post-Doctoral Researcher with the University of Macau, Macau, China, where he was involved in CMOS millimeter-wave integretaed circuit design. From 2017 to 2018, he was with the National University of Singapore, Singapore, where he served as a Researcher to develop CMOS phase-shifter modules for hybrid integrated flexible electronic systems.
He is currently a Scientist with the Advanced Quantum Architecture Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland. His current research interests include CMOS cryogenic RF circuits for quantum computer application.
Arnout Lodewijk M BeckersArnout was born in Leuven, Belgium. He received the M.Sc. degree in Nanoelectronics from
KU Leuven
in 2016. He wrote his M.Sc. thesis in the Physics Modeling and Simulation group at
imec
, Leuven, on the simulation of energy filtering in superlattice-based nanowires. In October 2016, he joined
ICLAB
as part of the European
H2020
MOS-Quito Project
(MOS-based Quantum Information Technology) to model the MOS transistor at cryogenic temperatures, dedicated to the design of cryogenic analog-RF circuits for improved qubit control. His research interests include quantum technology, low-temperature electronics, quantum physics, and cryogenic experiments.
ORCID
