Farzan Jazaeri

Farzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Biography

Official source

About this result

Related units (3)

Related research domains (33)

Related publications (83)

Capacitance

Capacitance is the capability of a material object or device to store electric charge. It is measured by the charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: self capacitance and mutual capacitance. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Quantum computing

A quantum computer is a computer that exploits quantum mechanical phenomena. At small scales, physical matter exhibits properties of both particles and waves, and quantum computing leverages this behavior, specifically quantum superposition and entanglement, using specialized hardware that supports the preparation and manipulation of quantum states. Classical physics cannot explain the operation of these quantum devices, and a scalable quantum computer could perform some calculations exponentially faster than any modern "classical" computer.

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states

PERGAMON-ELSEVIER SCIENCE LTD2023

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

Jean-Michel Sallese, Parnian Ferdowsi, Farzan Jazaeri, Michael Saliba

Predicting the performance of solar cells though analytical models is important for the theory-guided optimization of these devices. Earlier models neglect the impact of the optical generation in the

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high tempera

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022