Zinc phosphide

Zinc phosphide (Zn3P2) is an inorganic chemical compound. It is a grey solid, although commercial samples are often dark or even black. It is used as a rodenticide. Zn3P2 is a II-V semiconductor with a direct band gap of 1.5 eV and may have applications in photovoltaic cells. A second compound exists in the zinc-phosphorus system, zinc diphosphide (ZnP2). Synthesis and reactions Zinc phosphide can be prepared by the reaction of zinc with phosphorus; however, for critical applications, additional processing to remove arsenic compounds may be needed. :6 Zn + P4 → 2 Zn3P2 Another method of preparation include reacting tri-n-octylphosphine with dimethylzinc. Zinc phosphide reacts with water to produce phosphine (PH3) and zinc hydroxide (Zn(OH)2): :Zn3P2 + 6 H2O → 2 PH3 + 3 Zn(OH)2 Structure Zn3P2 has a room-temperature tetragonal form that converts to a cubic form at around 845 °C. In the room-temperature form there are discrete P atoms, zinc atoms

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Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Claudio Bruschini, Edoardo Charbon, Utku Karaca, Ekin Kizilkan, Myung Jae Lee, Vladimir Pesic

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300 K and 225 K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/mu m(2) and it decreases to 5 cps/mu m(2) at 225 K. Timing jitter is measured with passive quenching at 1550nm as 149 ps at full-width-at-half-maximum (FWHM), (300 K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR).

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Thermodynamic re-assessment of the Zn–P binary system

Simon Robert Escobar Steinvall, Anna Fontcuberta i Morral, Elias Zsolt Stutz, Mahdi Zamani

Thermodynamic phase diagrams are the cornerstones to develop synthesis of new materials. Zinc phosphide has evolved into a prospective semicontuctor for next generation solar cells, thanks to its abundance and functional properties. Here we derive an optimized Zn-P binary diagram, and compare it to two previously available assessments. We solve some of the artefacts and clarify the methodology to obtain the Gibbs free energy, reaching an accurate description of the phases. This work is important for the synthesis of zinc-phosphide in the form of thin film and nanostructures.

2019

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

Léa Buswell, Mirjana Dimitrievska, Simon Robert Escobar Steinvall, Anna Fontcuberta i Morral, Jean-Baptiste Leran, Rajrupa Paul, Elias Zsolt Stutz, Mahdi Zamani

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of solar cell alternatives to the silicon market. Here we provide a thorough study of the optical properties of single crystalline Zn3P2 thin films grown on (100) InP by molecular beam epitaxy. The films are slightly phosphorus-rich as determined by Rutherford backscattering. We elucidate two main radiative recombination pathways: one transition at approximately 1.52 eV attributed to zone-center band-to-band electronic transitions; and a lower-energy transition observed at 1.3 eV to 1.4 eV attributed to a defect band or band tail related recombination mechanisms. We believe phosphorus interstitials are likely at the origin of this band.

2021

MSE-209: Transfer phenomena in materials science

Ce cours porte sur le transfert de la chaleur par conduction, convection et rayonnement, ainsi que sur la diffusion à l'état solide. D'après les règles phénoménologiques (Equations de Fourrier et Fick), des problèmes de solution 1-D et 2-D ainsi que modèles atomiques de transport seront traité.