Concept

Tunnel diode

Related publications (101)

A Sub-Threshold Passive Step-Up Rectifier for Vibration Energy Scavengers

Nico de Rooij, Danick Briand, Pierre-André Farine, Alexis Boegli, Pattanaphong Janphuang, Don Isarakorn, Christian Robert, Jaskaranjeet Singh

This paper reports on the design and experimental verifications of a passive step-up rectifier for MEMS piezoelectric energy scavengers. The purpose of the proposed circuit is to improve system startup for vibration micro-generators without the need of an ...

Cell Bench Research Center, KAIST2011

Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes

Dirk Grundler, Hagen Klauk

A large area array of metal-oxide-metal (MOM) tunneling diodes with an ultrathin dielectric (∼3.6 nm aluminum oxide) have been fabricated via a transfer-printing process. The MOM diodes exhibit an excellent tunneling behavior that is suitable for rectifyin ...

American Institute of Physics2011

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

2011

Stochastic Resonance In A Balanced Pair Of Single-Electron Boxes

Alexandre Schmid

Stochastic resonance in a fundamental single-electron circuit, i.e., a balanced pair of single-electron boxes, is observed and presented theoretically, where the signal-to-noise ratio (SNR) of the internal states stimulated by responding to a periodic subt ...

2011

Actuated Transitory Metal-Ligand Bond As Tunable Electromechanical Switch

Klaus Kern

Electrically tunable molecules are highly attractive for the construction of molecular devices, such as switches, transistors, or machines. Here, we present a novel nanomechanical element triggered by an electrical bias as external stimulus. We demonstrate ...

2010

Frequency doubled 1534 nm laser system for potassium laser cooling

Jean-Philippe Brantut, Guillaume Stern

We demonstrate a compact laser source suitable for trapping and cooling potassium. By frequency doubling a fiber laser diode at 1534nm in a waveguide, we produce 767nm laser light. A current modulation of the diode allows us to generate the two required fr ...

2010

Switchable bandpass filter for WiFi-UMTS reception standards

Julien Perruisseau-Carrier

A reconfigurable bandpass filter able to switch between WiFi and UMTS reception standards is presented. The topology allows achievement of two accurate centre frequencies, each associated with a precisely defined bandwidth, using six pin diodes. The design ...

Institution of Engineering and Technology2010

Implementation of a reconfigurable parasitic antenna for beam-space BPSK transmissions

Julien Perruisseau-Carrier

A successful approach for designing a compact reconfigurable antenna system using a single active and two parasitic reactance-loaded dipoles is proposed. The switched parasitic antenna (SPA) operates at 2.6 GHz using PIN diode technology. It is designed to ...

2010

Inelastic electron tunneling spectroscopy: A route to the identification of the tip-apex structure

Klaus Kern

The vibrational spectrum of a tunneling junction on a clean Cu(111) surface has been characterized by vibrational density of states calculations and inelastic electron tunneling spectroscopy technique. We demonstrate that the achieved spectrum consists not ...

2010

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