Concept

P–n junction

Related publications (320)

Mixed phase silicon oxide layers for thin-film silicon solar cells

Christophe Ballif, Matthieu Despeisse, Peter Cuony, Nils Linus Löfgren, Michael Marending

Lower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film sil ...

2011

Formation of substoichiometric GeOx at the Ge-HfO2 interface

Alfredo Pasquarello, Peter Broqvist, Jan Felix Binder

The stability of oxygen vacancies across the Ge-HfO2 interface is studied through semilocal and hybrid density-functional calculations. On the semiconductor side, the formation energies are obtained for substoichiometric GeOx of varying x through the use o ...

American Institute of Physics2010

On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12

Paul Muralt

The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielec ...

Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England2010

Effect of Nb-donor and Fe-acceptor dopants in (Bi1/2Na1/2)TiO3–BaTiO3–(K0.5Na0.5)NbO3 lead-free piezoceramics

Dragan Damjanovic

The role of Fe as an acceptor and Nb as a donor in 0.94−xTiO3–0.06BaTiO3−x (K0.5Na0.5)NbO3 (100xKNN) (x = 0.02 and 0.03) lead-free piezoceramics was investigated. X-ray diffraction analyses show that all the profiles are best-fitted with a cu ...

American Institute of Physics2010

Lukasiewicz fuzzy logic networks and their ultra low power hardware implementation

Rafal Tomasz Dlugosz

In this paper, we propose a new category of current-mode Łukasiewicz OR and AND logic neurons and ensuing logic networks along with their ultra-low power realization. The introduced circuits can operate in a wide range of the input signals varying in-betwe ...

Elsevier2010

A circuit-level substrate current model for smart-power ICs

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...

Institute of Electrical and Electronics Engineers2010

Synthesis and characterization of group II-Vi semiconductor nanowires

Holger Jens Böttcher

Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...

EPFL2010

Massive Gene Duplication Event among Clinical Isolates of the Mycobacterium tuberculosis W/Beijing Family

Gaëlle Séraphine Kolly

As part of our effort to uncover the molecular basis for the phenotypic variation among clinical Mycobacterium tuberculosis isolates, we have previously reported that isolates belonging to the W/Beijing lineage constitutively overexpress the DosR-regulated ...

2010

Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric

Katherine Boucart

The down-scaling of conventional MOSFETs has led to an impending power crisis, in which static power consumption is becoming too high. In order to improve the energy-efficiency of electronic circuits, small swing switches are interesting candidates to repl ...

EPFL2010

The Single-Electron Bipolar Avalanche Transistor

Marc Lany

We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...

EPFL2010

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