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This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lo ...
This article presents a fully on-chip low-power low drop-out (LDO) voltage regulator dedicated to remotely powered wireless cortical implants. This regulator is stable over the full range of alternating current without the need of dedicated active circuitr ...
Monte Carlo (MC) simulations significantly contributed to a better understanding of laser-Doppler flowmetry (LDF). Here it is shown that the data obtained from standard MC simulations can be reinterpreted and used to extract more information such as the ph ...
This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lo ...
We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...
The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current−voltage measurements. By varying the implantation param ...
Two-level multiphase voltage source inverters (VSIs) are typically used as the supply for multiphase machines. Such machines are often with concentrated winding in which case, certain low-order stator current harmonics are injected to provide torque enhanc ...
Multiphase variable-speed drives, supplied from two-level voltage-source inverters (VSIs), are nowadays considered for various industrial applications. Depending on the drive structure and/or the motor design, the VSI is required to generate either sinusoi ...
Institute of Electrical and Electronics Engineers2008
Carbon nanotube field-effect transistors with Si(3)N(4) passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum c ...