Concept

Static random-access memory

Related publications (235)

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Shrinking FPGA Static Power via Machine Learning-Based Power Gating and Enhanced Routing

Mirjana Stojilovic, Hossein Asadi, Zeinab Seifoori

Despite FPGAs rapidly evolving to support the requirements of the most demanding emerging applications, their high static power consumption, concentrated within the routing resources, still presents a major hurdle for low-power applications. Augmenting the ...

2021

Miss-Optimized Memory Systems: Turning Thousands of Outstanding Misses into Reuse Opportunities

Mikhail Asiatici

Even if Dennard scaling came to an end fifteen years ago, Moore's law kept fueling an exponential growth in compute performance through increased parallelization. However, the performance of memory and, in particular, Dynamic Random Access Memory (DRAM), ...

EPFL2021

Memory chip or memory array for wide-voltage range in-memory computing using bitline technology

David Atienza Alonso, Marina Zapater Sancho, Marco Antonio Rios, William Andrew Simon

A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a p ...

2021

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Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to conventional SRAM due to its high-density, low-leakage, and inherent two-ported functionality. However, its dynamic storage mechanism requires power-hungry refresh cycles to maintain data. ...

IEEE2020

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...

EPFL2020

Gyrokinetic simulations on many- and multi-core architectures with the global electromagnetic Particle-In-Cell Code ORB5

Laurent Villard, Stephan Brunner, Emmanuel Lanti, Noé Thomas Elie Ohana, Claudio Gheller

Gyrokinetic codes in plasma physics need outstanding computational resources to solve increasingly complex problems, requiring the effective exploitation of cutting-edge HPC architectures. This paper focuses on the enabling of ORB5, a state-of-the-art, fir ...

2020

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020