Publications related to Intel 8008

Jitter Analysis and Measurement in Subthreshold Source-Coupled Differential Ring Oscillators

Seyed Armin Tajalli, Mahsa Shoaran, Yusuf Leblebici

The jitter and the phase noise of ring oscillators utilizing subthreshold source-coupled logic (STSCL) style are analyzed in this paper. Closed-form equations are derived to predict the jitter and phase noise caused by white and flicker noise. Measurement ...

2015

Cost-Effective Design of Mesh-of-Tree Interconnect for Multi-Core Clusters with 3-D Stacked L2 Scratchpad Memory

Giovanni De Micheli, Luca Benini

3-D integrated circuits (3-D ICs) offer a promising solution to overcome the scaling limitations of 2-D ICs. However, using too many through-silicon-vias (TSVs) pose a negative impact on 3-D ICs due to the large overhead of TSV (e.g., large footprint and l ...

Institute of Electrical and Electronics Engineers2015

>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

Christophe Ballif, Antoine Descoeudres, Stefaan De Wolf, Loris Barraud

The properties and high-efficiency potential of frontand rear-emitter silicon heterojunction solar cells on n- and p-type wafers were experimentally investigated. In the low-carrierinjection range, cells on p-type wafers suffer from reduced minority carrie ...

Ieee-Inst Electrical Electronics Engineers Inc2013

RST Controller Design by Convex Optimization Using Frequency-Domain Data

Alireza Karimi, Roland Longchamp, Gorka Galdos Sanz de Galdeano

A new robust fixed-order RST controller design approach by convex optimization is proposed in this paper. Only frequency-domain data are considered in the approach for linear time-invariant single-input single-output systems. It is shown that performance s ...

2011

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Vincent Pott

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

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