Silicon–germanium

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Related lectures (25)

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Doping in Semiconductors: Carrier Concentration and Ionization Energy

Discusses doping in semiconductors, focusing on carrier concentration, ionization energy, and the effects of temperature on electrical properties.

Quantum Structures: Band Gaps and Heterostructures

Covers the formation and properties of quantum wells and heterostructures in semiconductor materials.

Semiconductor Materials: Electron Mobility and Conductivity

Covers semiconductor materials, electron mobility, and conductivity characteristics of silicon.

Semiconductor Components: N+/N Junction Analysis

Covers the analysis of N+/N junctions in semiconductor components, focusing on diffusion and drift currents and their equilibrium.

Doping Profiles in Semiconductor Components

Covers doping profiles in semiconductors, focusing on silicon bars doped with boron and phosphorus for applications like avalanche photodiodes.

PN Junctions: Equilibrium and Built-in Potential

Covers the behavior of p-n junctions, focusing on equilibrium, built-in potential, and depletion zones.

Indirect Bandgap: Optical Detectors and Phonons

Covers the principles of optical detectors in semiconductors with an indirect bandgap, focusing on energy and momentum conservation during electron transitions.

Fermi Levels: Temperature Effects on Semiconductor Behavior

Covers the impact of temperature on Fermi levels in doped semiconductors, analyzing behavior at 300 K, 600 K, and 77 K.

Optical Absorption: Understanding Semiconductor Behavior

Covers the principles of optical absorption in gases and semiconductors, detailing energy interactions and measurement techniques.

Formation of Bands in Semiconductors: Understanding Silicon and Gallium Arsenide

Covers the formation of bands in semiconductors, focusing on silicon and gallium arsenide, and their electronic properties and crystalline structures.