Doping Profiles in Semiconductor Components

This lecture discusses doping profiles in semiconductor components, focusing on a silicon bar doped with boron and phosphorus. The instructor presents a specific exercise involving doping concentrations, where N1, N2, and N3 represent different doping levels. The configuration is typical in standard CMOS processes, featuring P+ and N-WELL regions. The lecture highlights the creation of an avalanche photodiode designed to detect single photons, explaining the significance of doping levels in the device's performance. Measurements of doping concentrations at various depths are analyzed, revealing that the doping is not constant and varies logarithmically. The instructor explains how to calculate majority and minority carrier concentrations based on the doping levels, emphasizing the role of boron as an acceptor and phosphorus as a donor in silicon. The calculations for carrier concentrations in the substrate and the doped regions are detailed, providing insights into the behavior of semiconductor materials under different doping conditions.