Concept

Dynamic random-access memory

Related publications (322)

Improving Energy-Efficiency in Dynamic Memories Through Retention Failure Detection

A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operation. How ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Data-Retention-Time Characterization of Gain-Cell eDRAMs across the Design and Variations Space

Andreas Peter Burg, Andrea Bonetti

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

In Search of Lost Bandwidth: Extensive Reordering of DRAM Accesses on FPGA

Paolo Ienne, Mikhail Asiatici, Gabor Andras Csordas

For efficient acceleration on FPGA, it is essential for external memory to match the throughput of the processing pipelines. However, the usable DRAM bandwidth decreases significantly if the access pattern causes frequent row conflicts. Memory controllers ...

IEEE COMPUTER SOC2019

DynaBurst: Dynamically Assemblying DRAM Bursts over a Multitude of Random Accesses

Paolo Ienne, Mikhail Asiatici

The effective bandwidth of the FPGA external memory, usually DRAM, is extremely sensitive to the access pattern. Nonblocking caches that handle thousands of outstanding misses (miss-optimized memory systems) can dynamically improve bandwidth utilization wh ...

IEEE2019

FPGA-Based Emulation of Embedded DRAMs for Statistical Error Resilience Evaluation of Approximate Computing Systems

Andreas Peter Burg, Andrea Bonetti, Marco Widmer

Embedded DRAM (eDRAM) requires frequent power-hungry refresh according to the worst-case retention time across PVT variations to avoid data loss. Abandoning the error-free paradigm, by choosing sub-critical refresh rates that gracefully degrade the eDRAM c ...

ASSOC COMPUTING MACHINERY2019

A 24 kb Single-Well Mixed 3T Gain-Cell eDRAM with Body-Bias in 28 nm FD-SOI for Refresh-Free DSP Applications

Andreas Peter Burg, Robert Giterman, Cosimo Aprile, Yusuf Leblebici, Andrea Bonetti, Jonathan Emmanuel D Narinx, Nicolas Claude Frigerio

Logic-compatible gain-cell embedded DRAM (GC-eDRAM) is an emerging alternative to conventional SRAM for memory-dominated system-on-chip (SoC) designs due to its high-density, low-power, and two-ported operation. Although GCs have a limited data retention t ...

IEEE2019

A Fast, Reliable and Wide-voltage-range In-memory Computing Architecture

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, William Andrew Simon

In-Memory Computing (IMC) solutions, and particularly bitline computing in SRAM, appear promising as they mitigate one of the most energy consuming aspects in computation: data movement. In this work we propose a fast (2.4Ghz for bitwise operations and 2.4 ...

Association for Computing Machinery2019

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

Andrea Bonetti

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...

EPFL2019

Improving Main-memory Database System Performance through Cooperative Multitasking

Georgios Psaropoulos

Database systems access memory either sequentially or randomly. Contrary to sequential access and despite the extensive efforts of computer architects, compiler writers, and system builders, random access to data larger than the processor cache has been s ...

EPFL2019

Bridging the Latency Gap between NVM and DRAM for Latency-bound Operations

Anastasia Ailamaki, Georgios Psaropoulos

Non-Volatile Memory (NVM) technologies exhibit 4× the read access latency of conventional DRAM. When the working set does not fit in the processor cache, this latency gap between DRAM and NVM leads to more than 2× runtime increase for queries dominated by ...

ACM2019

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