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Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Frank Nüesch, Roland Hany, Beat Ruhstaller

Bilayer organic solar cells based on trimethine cyanine donor and C-60 acceptor materials have been fabricated by coating the trimethine dye from solution on molybdenum oxide (MoO3) anode buffer layer. The choice of deposition solvent drastically influence ...

Amer Chemical Soc2014

Leakage mechanisms in InAlN based heterostructures

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...

Amer Inst Physics2014

Frequency jumps in single chip microwave LC oscillators

Giovanni Boero, Marco Grisi, Gabriele Gualco

We report on the experimental observation of oscillation frequency jumps in microwave LC oscillators fabricated using standard complementary metal-oxide-semiconductor technologies. The LC oscillators, operating at a frequency of about 20 GHz, consist of a ...

American Institute of Physics2014

Time-resolved spin processes in Alq(3) light-emitting diodes

Jean-Philippe Ansermet, Francesco Comandè

Using pulsed electroluminescence detected magnetic resonance (PELDMR), we study the dynamics of spin processes in Alq(3) based light-emitting diodes. The transitions induced by magnetic resonance are found to be much faster than the space charge reaction t ...

Amer Physical Soc2014

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Denis Martin

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Junctionless Silicon Nanowire Resonator

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch, Maren Arp

The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this study, we demonstrate a novel double-transduction principle for silicon nanowire resonators which exploits the ...

2014

Measurement and modeling of microlenses fabricated on single-photon avalanche diode arrays for fill factor recovery

Edoardo Charbon, Juan Mata Pavia, Martin Wolf

Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel's surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanch ...

Optical Soc Amer2014

Resolving the Memory Bottleneck for Single Supply Near-Threshold Computing

David Atienza Alonso, Mohamed Mostafa Sabry Aly

This paper focuses on a review of state-of-the-art memory designs and new design methods for near-threshold computing (NTC). In particular, it presents new ways to design reliable low-voltage NTC memories cost-effectively by reusing available cell librarie ...

IEEE/ACM Press2014

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Michael Graetzel, Florian Le Formal, Stanley David Tilley, Maurin Cornuz, Xiaoyan Wang

Transient absorption spectroscopy on subpicosecond to second time scales is used to investigate photogenerated charge carrier recombination in Si-doped nanostructured hematite (alpha-Fe2O3) photoanodes as a function of applied bias. For unbiased hematite, ...

American Chemical Society2014

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Diode

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched Applications

Leakage mechanisms in InAlN based heterostructures

Frequency jumps in single chip microwave LC oscillators

Time-resolved spin processes in Alq(3) light-emitting diodes

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Junctionless Silicon Nanowire Resonator

Measurement and modeling of microlenses fabricated on single-photon avalanche diode arrays for fill factor recovery

Resolving the Memory Bottleneck for Single Supply Near-Threshold Computing

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Graph Chatbot

Chat with Graph Search

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Frequency jumps in single chip microwave LC oscillators

Leakage mechanisms in InAlN based heterostructures

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Junctionless Silicon Nanowire Resonator

Resolving the Memory Bottleneck for Single Supply Near-Threshold Computing

Measurement and modeling of microlenses fabricated on single-photon avalanche diode arrays for fill factor recovery

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched Applications

Time-resolved spin processes in Alq(3) light-emitting diodes