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For pt. I, see ibid., vol.6, 451 (1974). The light output powers of a semiconductor laser diode within an external cavity and of two optical coupled diodes are evaluated as a function of the system parameters (drive currents and coupling coefficient). A po ...
The light output and the electron density within the active layer of a semiconductor laser have been calculated from the steady state solution . The assumed rate equation model takes into account the spontaneous emission into the lasing modes. Simple analy ...
Describes a diode laser radar with range up to 7 km for passive targets. The system includes a pulsed single-heterostructure stacked diode laser array, transmitting and receiving optics, a silicon avalanche detector unit and associated electronics. Theory ...
An external cavity coupled to a conventional Fabry-Perot GaAs diode laser operating continuously has been found to cause modulation of the light output at a frequency within the range 0.5 to several GHz. The modulation depth is close to 100 percent and the ...
New luminescence centers can be generated by irradiating AlxGa1-xAs structures with focused light from a CW Kr-ion laser operated at 647 nm. The luminescence centers are generated at a laser power density of 0.5 MW/cm2. Regions as small as 0.8 μm wide a ...
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, ...
The stripe junction geometry of laser diodes is produced by laser alloying. The application of such diodes is restricted by nonlinearities of the light-current characteristics, by transients and multimode operation. In the future, they might be replaced by ...
An interferometric technique was developed for detecting fast displacements of small areas in beam direction by less than λ/8. It utilizes a modified Michelson interferometer and a He-Ne laser light source. The technique was applied to measure the t ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
