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This paper presents an ultra-low power generic compensation scheme that is used to implement a real time clock based on an AlN-driven 1 MHz uncompensated silicon resonator achieving 3.2 mu W power dissipation at 1 V and +/- 10 ppm frequency accuracy over a ...
The formation of LiBD4 by the reaction of LiD in a diborane/hydrogen atmosphere was analysed by in situ neutron diffraction and subsequent microstructural and chemical analysis of the final product. The neutron diffraction shows that nucleation of LiBD4 al ...
The charge-density-wave phase transition of 1T-TiSe2 is studied by angle-resolved photoemission over a wide temperature range. An important chemical-potential shift which strongly evolves with temperature is evidenced. In the framework of the exciton conde ...
To generate high-level redundancy for structural glass beams, a novel concept of laminating a metal reinforcement to a structural glass beam has been developed at Delft University of Technology (TU Delft). This concept makes use of the relatively stiff pol ...
This paper is focused on the design, simulation and optimisation of the ITER divertor magnetic tangential coils. The most critical issue for the divertor coils is to minimise RITES [G. Vayakis, et al., Radiation-induced thermoelectric sensitivity (RITES) i ...
A stirred-tank reactor was built with the objective of rapid and accurate temperature control in the reaction vessel. A first-principles heat transfer model was developed for the jacketed batch system, with the jacket inlet temperature used to control the ...
The operating temperature range of molten carbonate fuel cells (MCFCs) is about 925-955K. An input gas temperature of at least 855 K is necessary to guarantee good ionic conduction inside the cells. Maximum local temperatures higher than 960 K should be av ...
The tensile behavior of adhesively-bonded double-lap joints composed of pultruded glass fiber-reinforced adherends and an epoxy adhesive was investigated under temperatures ranging between -35°C and 60°C. The load-elongation response was influenced primari ...
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in ...
