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We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...
The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...
On board of satellites traditionally Travelling Wave Tube Amplifiers (TWTAs) together with standard waveguide technology were used for transmitters in telecommunication payload systems. With the advent of Solid State Power Amplifiers (SSPAs) printed circui ...
We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...
A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 mum, w = 165 nm, and h = 400 n ...
Industrial applications often require two (or more) variable speed electric drives, which have to be controlled independently. An example is a centre-driven two-motor winder, where ac machines are traditionally supplied from their individual three-phase vo ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
The effect of exposing cyanine–fullerene C60 bilayer solar cells to ambient atmosphere is investigated. For exposure times of a few hours and concomitant light soaking, the device performance experiences a drastic power efficiency increase going from 0.14% ...
Multilevel voltage source inverters where first introduced in the early 1980s. Since then, they have been continuously developed, offering a wide new research area in power electronics. The popularity of multilevel solutions come from the advantages that t ...
Industrial applications often require a number of variable speed electric drives. In the majority of cases, these multi-motor drive systems require independent control of individual motors. Over the past decade, research efforts have been made to reduce th ...
