Heat Dissipation in Field-Effect Transistors

This lecture addresses the challenge of heat dissipation in miniaturization and integration, focusing on field-effect transistors. The instructor explains the impact of short channel effects on transistor performance, the limitations of graphene due to its lack of band gap, and the potential of transition metal dichalcogenides like MOS2 as semiconductor materials. The discussion covers the unique properties of MOS2, its application in electronic devices, the development of MOS2-based transistors and circuits, and the integration of MOS2 with graphene for flash memory. The lecture concludes with insights on the future potential of these materials in flexible electronics and the need to reduce synthesis costs for widespread adoption.