Fermi Level and Carrier Concentration in Semiconductors

This lecture covers the determination of electron concentration in semiconductors at room temperature based on the Fermi level, exploring values for various materials like InSb, InAs, Ge, Si, GaAs, and GaN. It also discusses the position of the Fermi level in Si:P as a function of temperature and the Fermi level in silicon for different doping levels. Furthermore, it delves into the concept of camphoteric dopants in GaAs and the formation of impurity bands in semiconductors. The lecture concludes with an analysis of carrier concentration and conductivity type in InGaN layers doped with silicon. References are made to Grundmann's book throughout the presentation.