Lecture
This lecture covers the mechanisms of charge collection in CCD cameras, focusing on the role of photogates and the generation of charges. The instructor begins by explaining the NMOS transistor and the metal oxide semiconductor interface, highlighting how a strong positive voltage on the gate creates a channel for electron flow. The discussion then shifts to the generation of charges within the channel, emphasizing thermal generation as a slow process. The instructor illustrates the effects of applying voltage on the gate, demonstrating how the potential well fills with charges. The concept of the full well capacity is introduced, explaining the maximum charge accumulation under metallization. The lecture also addresses the practical application of charge collection in camera arrays, detailing how each pixel collects light and transfers charges for measurement. The importance of minimizing thermal generation noise is discussed, along with the impact of illumination methods on quantum efficiency, particularly comparing backside and frontside illumination.