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This lecture covers the second-order effects in MOSFETs, focusing on the Body Effect and Channel-Length Modulation. The Body Effect describes the impact of the substrate bias on the threshold voltage, while Channel-Length Modulation discusses the reduction in channel length as the drain voltage changes. The lecture explains how these effects influence the device's behavior and performance, providing examples and formulas to illustrate the concepts. Additionally, it delves into Subthreshold Conduction, where weak inversion occurs, affecting the current flow from drain to source. Understanding these effects is crucial for designing and optimizing MOSFET circuits.