Second order Effects: Body Effect and Channel-Length Modulation

Related lectures (32)

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Explores the impact of Body Effect and Channel-Length Modulation on MOSFET performance.

Simplifies MOS device analysis with the small-signal model, including body effect.

Covers the EKV MOS Transistor Model, focusing on the charge-based model and its applications.

Explores MOSFET operations, modeling, and tradeoffs in analog IC design, emphasizing biasing, mode of operation, and small-signal parameters.

Provides an overview of MOSFET operation, focusing on NMOS and PMOS characteristics, including current equations and channel modulation effects.

Covers the control of threshold voltage in semiconductor devices through oxide thickness and substrate doping adjustments.

Revisits the modeling of the MOS transistor for low-voltage and low-power analog circuit design, focusing on the EKV charge-based model.

Explains the operation of NMOS structures and their behavior in various regimes, including sub-threshold, linear, and saturation.

Covers the MOS I/V characteristics, including triode and saturation regions, deep triode, and second-order effects.

Covers abstraction levels, EPFL design flow, lowerbounds, and layout recommendations.