Lecture
This lecture covers the fundamentals of charge-coupled devices (CCDs), focusing on their historical development and technical specifications. It begins with the invention of the CCD in 1969 by W. Boyle and G. E. Smith, highlighting its initial use as an 8-pixel linear device and the subsequent advancements that led to the capture of images. The lecture discusses the evolution of CCD technology, showcasing large-size detectors developed in 1996 and 2006, which achieved megapixel resolutions. The instructor explains the structure and function of metal-oxide-semiconductor (MOS) capacitors, detailing their components and the role of voltage control in semiconductor behavior. Key concepts such as surface potential, flat band voltage, and deep depletion are introduced, along with the equations governing these phenomena. The lecture concludes with a graphical representation of the relationship between surface potential and applied voltage, illustrating the transition from flat bands to strong inversion in MOS devices, which is crucial for understanding CCD operation.