This lecture covers the phenomena of dropwise condensation and homogeneous nucleation, explaining the anomalous t^(1/3) growth of individual drops and the merging events leading to a t^1 growth. It delves into the surface energy, chemical potential, and the evolution of drop radius over time, as well as the factors influencing the growth of drops on a silicon wafer. The instructor presents experimental results confirming the growth patterns of individual drops and the maintenance of surface coverage during condensation.
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