Bulk Acoustic Wave Resonators in MEMS

In course

Description

This lecture covers the design and fabrication of Bulk Acoustic Wave (BAW) resonators, focusing on their application in smartphones for RF front-end modules. It explains the structure of BAW resonators, the fabrication process, and the importance of precise thickness and good piezoelectric properties. The lecture also discusses the two types of BAW resonators, FBAR and SMR, and their role in telecom band selection. Key players in the industry and the widespread use of BAW filters in smartphones, such as the iPhone 6S, are highlighted.

In MOOCs (3)

Instructors (2)

Official source

https://mediaspace.epfl.ch/media/0_gwkju69o

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Related concepts (24)

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

MEMS

MEMS (Microelectromechanical systems) is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2.

Semiconductor fabrication plant

In the microelectronics industry, a semiconductor fabrication plant (commonly called a fab; sometimes foundry) is a factory for semiconductor device fabrication. Fabs require many expensive devices to function. Estimates put the cost of building a new fab over one billion U.S. dollars with values as high as

3–4 billion not being uncommon. TSMC invested

9.3 billion in its Fab15 300 mm wafer manufacturing facility in Taiwan. The same company estimations suggest that their future fab might cost $20 billion.

65 nm process

The 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.

Thin-film bulk acoustic resonator

A thin-film bulk acoustic resonator (FBAR or TFBAR) is a device consisting of a piezoelectric material manufactured by thin film methods between two conductive – typically metallic – electrodes and acoustically isolated from the surrounding medium. The operation is based on the piezoelectricity of the piezolayer between the electrodes. FBAR devices using piezoelectric films with thicknesses ranging from several micrometres down to tenths of micrometres resonate in the frequency range of 100 MHz to 20 GHz.