Lithography: Electron Beam Lithography and Resists

This lecture covers the use of positive resist PMMA in electron beam lithography, discussing its high resolution and various molecular weights. It also explores the bi-layer process for undercut, chain scission upon exposure, and alternative resists like ZEP and CSAR. Additionally, it delves into negative resist HSQ, known for its high resolution and resistance to solvents and O2 plasma. The lecture further examines multi-layer processes, alignment techniques, and concludes with a summary of design preparation, resist interaction, contrast, proximity effects, and alignment processes.