This lecture compares the operation and characteristics of Bipolar Junction Transistor (BJT) and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) in logic systems. It discusses the need for base current in BJT and gate charge in MOSFET, highlighting the differences between TTL and CMOS technologies in terms of speed, energy consumption, and interfacing. The lecture also covers the implications of over and under voltage scenarios, electrostatic discharge, and the use of unused gates in integrated circuits.