Modeling RF MOS Transistors: Nonlinearity Effects

This lecture covers the basic RF concepts related to the modeling of active and passive devices at RF. It discusses the effects of nonlinearity in RF MOS transistors, focusing on topics such as two-tone input, intermodulation, and the third-order intercept point. The lecture also delves into the comparison between single-tone and two-tone inputs, providing examples and simulations to illustrate the concepts. Additionally, it explores the impact of nonlinearity on weak and strong inversion in MOS transistors, emphasizing the transit frequency, extrinsic gate capacitance, and the transit frequency scaling. The lecture concludes with a detailed explanation of the inversion coefficient and its significance in characterizing the level of inversion in RF transistors.