Transistor Figures of Merit

This lecture covers the transistor figures of merit, focusing on the MOSFET model valid for RF from weak to strong inversion. It explains the importance of having a model that considers velocity saturation and covers weak, moderate, and strong inversion. The lecture discusses the effect of velocity saturation on drain current, transconductance, and transconductance ratio in different inversion regions. It also explores the impact of velocity saturation on the drain current in strong and weak inversion, as well as the current efficiency figure of merit. The lecture delves into specific current values, charge-based models, and the impact of velocity saturation on transistor performance in different processes.