Lecture
This lecture discusses the integration of silicon nanocrystals in non-volatile memory devices, specifically focusing on the fabrication of MOS components. It begins with an overview of a practical training session held in a clean room, where participants learn about the concept of 'Nano-Inside' applied to NMOS technology. The instructor explains the operations involved in manufacturing integrated circuits for memory applications and their material and component characterizations. The lecture highlights how silicon nanocrystals serve as charge trapping devices, allowing for durable information storage without the need for continuous power supply. The structure of a floating gate memory is examined, detailing how trapped electrons within the nanocrystals affect the formation of the N-channel. The discussion also covers the MNOS structure, illustrating the process of writing and erasing data through the application of positive and negative voltages, respectively. Overall, the lecture provides a comprehensive understanding of how nanocrystals can enhance memory technology.