Physics of p-n Junctions

This lecture provides an account of the physics of the p-n junction, starting with historical context and fabrication steps. It describes the properties of an abrupt p-n junction at thermal equilibrium, the formation of a space charge region, and the derivation of the built-in electric field and potential. The lecture also covers diffusion and drift currents, electrostatic considerations, and the width of the space charge region. Examples are given for silicon, and the lecture delves into optical lithography, transistor technology nodes, and the role of lithography in integrated circuit fabrication.