Lecture
This lecture discusses the concepts of blooming and anti-blooming in charge-coupled devices (CCDs). It begins by explaining the issue of light overflow in CCD cells, where excess light can cause a cell to exceed its capacity, leading to unwanted effects in image capture. The instructor introduces the idea of an overflow drain to manage this excess light, detailing how a gate can be designed to control the flow of excess electrons to prevent them from affecting neighboring cells. The lecture further elaborates on the structure of a buried CCD with vertical anti-blooming features, emphasizing the importance of substrate design in collecting excess photoelectrons. The instructor describes the Bawid CCD structure, highlighting its anti-blooming profile and the interdiffusion process during fabrication that creates a low-doped P region. The lecture concludes with a summary of the working principle of these designs, illustrating how they effectively prevent blooming by directing excess electrons to the substrate instead of adjacent pixels.